描述了用于处理半导体衬底上的碳膜的方法。 碳可以具有高含量的sp3键合以增加耐蚀刻性，并使新的应用作为硬掩模。 在处理之前和之后，碳膜可以被称为类金刚石碳。 处理的目的是在不牺牲耐蚀刻性的情况下降低沉积碳膜的典型高应力。 该处理涉及使用由局部电容等离子体形成的等离子体流出物进行离子轰击。 局部等离子体由一种或多种惰性气体，碳 - 氢前体和/或含氮前体形成。

A method for processing a carbon film on a semiconductor substrate are described. Carbon may have a high content of sp ³ bonding in order to increase the etch resistance and enable the new application as a hard mask. Carbon treatment to the film before and even the diamond after treatment - can be referred to by like carbon. The purpose of the processing, and without sacrificing to stand, the deposited carbon film typically decreases the etch resistance to high stress. Process is followed by the ion bombardment using a plasma formed from the effluent localized capacitive plasma. Localized plasma is inert gas, carbon-are formed from one or more of the hydrogen precursor and / or nitrogen-containing precursor - and.