一种3-D /垂直非易失性（NV）存储器件，例如3-D NAND闪速存储器及其制造方法，NV存储器件包括垂直开口，其设置在第一堆叠层和第二堆叠层的交替堆叠层的堆叠中 设置在每个开口的内侧壁上的多层电介质，设置在所述多层电介质上的第一沟道层和设置在所述第一沟道层上的第二沟道层，其中，所述第一沟道层中的至少一个 或第二通道层包括多晶锗或硅 - 锗。

3-D NAND flash memory device and a 3-D / vertical ratio, such as volatile (NV) memory devices, and there is provided a method of manufacturing the same, NV memory device comprises alternating from a first stack of layers and a second stack of layers on the wafer layer dielectric, the multi-multi-disposed on the inner side walls of the vertical opening, each opening being placed on the stack of a stack layer comprising a second channel layer disposed on a first channel layer and a first channel layer that is placed on top of layer dielectric, and at least one of the first or second channel layers are polycrystalline germanium or silicon-germanium.