The packaged semiconductor device includes a first main surface, a second main surface, first vias 204 connected between the first and second main surfaces, and first contact pads 106 in contact with the first vias on the first main surface. , A substrate 102 including second contact pads 206 in contact with the first vias on a second main surface and an opening 110 between the first and second main surfaces. The first integrated circuit (IC) die 502 is disposed within an opening in the substrate. The second IC die is installed on the first IC die. Electrical connections 602 are formed between the second IC die 502 and the second contact pads. The first conductive layer 802 is over the contact pads 304 and the first contact pads 206 on the first IC die 302. The encapsulated material 604 is on the first IC die, the second IC die, on the second major surface of the substrate around the electrical connections, and between the edges of the first IC die and the edges of the opening.