本发明提供一种半导体设备及开关组件。由于习知之单芯片双MOSFET系将两个MOSFET之芯片并列，且使汲极电极短路之构造，因此有安装面积大，且汲极电极间之电阻无法降低之问题，于市场要求的小型化、薄型化方面受到限制。本发明系将两个MOSFET半导体芯片之汲极电极彼此直接连接，使两个芯片重叠者。由于双MOSFET中，无须将汲极电极导出外部，而仅为两个闸极端子及两个源极端子，因此借由引线框架或导电图案将该等四端子导出外部。借此可达成设备之小型化与低导通电阻化。

A conventional one-chip dual MOSFET has a problem that the mounting area thereof is large and the resistance between the drain electrodes cannot be reduced, due to its structure of arranging two chips of MOSFET side by side and short-circuiting the drain electrodes, and is thus limited in the reduction of size and thickness as the market demanded. This invention provides a semiconductor device in which the drain electrodes of two MOSFET semiconductor chips are directly connected to each other and the two chips are superposed. With this arrangement, the need for leading the drain electrodes to the outside is eliminated in the dual MOSFET, only two gate terminals and two source terminals have to be led to the outside through lead frame or conductive pattern. Accordingly, the device can be made small and the on-resistance can be reduced.