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Invention Patent
TW200721418A 半導體裝置、半導體裝置之製造方法、電子零件、電路基板及電子機器 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT BOARD, AND ELECTRONIC DEVICE 审中-公开
半导体设备、半导体设备之制造方法、电子零件、电路基板及电子机器 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT BOARD, AND ELECTRONIC DEVICE

  • Patent Title: 半導體裝置、半導體裝置之製造方法、電子零件、電路基板及電子機器 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT BOARD, AND ELECTRONIC DEVICE
  • Patent Title (English): Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit board, and electronlc device
  • Patent Title (中): 半导体设备、半导体设备之制造方法、电子零件、电路基板及电子机器 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT BOARD, AND ELECTRONIC DEVICE
  • Application No.: TW095129010
    Application Date: 2006-08-08
  • Publication No.: TW200721418A
    Publication Date: 2007-06-01
  • Inventor: 橋元伸晃 HASHIMOTO, NOBUAKI
  • Applicant: 精工愛普生股份有限公司 SEIKO EPSON CORPORATION
  • Applicant Address: 日本
  • Assignee: 精工愛普生股份有限公司 SEIKO EPSON CORPORATION
  • Current Assignee: 精工愛普生股份有限公司 SEIKO EPSON CORPORATION
  • Current Assignee Address: 日本
  • Agent 陳長文
  • Priority: 日本 2005-231573 20050810
  • Main IPC: H01L
  • IPC: H01L
半導體裝置、半導體裝置之製造方法、電子零件、電路基板及電子機器 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT BOARD, AND ELECTRONIC DEVICE
Abstract:
本發明之半導體裝置,其包含:具有主動面之半導體基板、設置於前述主動面側之第1電極、設置於前述主動面側且與前述第1電極電性連接之外部連接端子、和設置於前述半導體基板之主動面側之連接用端子。
Abstract(Chinese):

本发明之半导体设备,其包含:具有主动面之半导体基板、设置于前述主动面侧之第1电极、设置于前述主动面侧且与前述第1电极电性连接之外部连接端子、和设置于前述半导体基板之主动面侧之连接用端子。

Abstract(English):

A semiconductor device includes: a semiconductor substrate having an active face; a first electrode provided on or above the active face; an external connection terminal provided on or above the active face and electrically connected to the first electrode; and a connection terminal provided on or above the active face of the semiconductor substrate.

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