在分立半导体之芯片中,已知有将电流路径上之第1电极及第2电极设于半导体基板之第1主面侧而可以进行覆晶安装者。但是,因电流于基板内亦朝水平方向流动,故存有电阻成份增加的问题。本发明系将连接至组件区域的第1电极及第2电极设置于第1主面侧,且于第2主面侧设置具有耐腐蚀性、耐氧化性的低电阻之厚膜金属层。借此,减低流通于基板水平方向之电流的电阻成分。此外,借由适当地选择厚膜金属层之厚度,可以抑制成本的增加而减低设备之电阻値。另外,借由于厚膜金属层采用金(Au),可以防止因时间经过所致的厚膜金属层之变色等不良。

This invention provides a semiconductor device for solving the problems that the current also flows in the horizontal direction inside the substrate in the conventional chip of a discrete semiconductor capable of arranging a first electrode and a second electrode in the current path into a first main surface side of a semiconductor substrate and flip chip packaging. In the semiconductor device of the present invention, the first electrode and the second electrode connected to an element area are arranged in a first main surface side, and a thick-film metal layer with low resistance having corrosion-resistance and oxidation-resistance is arranged in a second main surface side. Thereby, a resistance component against the current flowed in a substrate's horizontal direction can be reduced. Moreover, the cost increase can be mitigated and the resistance value of the device can be reduced by properly selecting the thickness of the thick-film metal layer. Furthermore, the defect of the color change or the like in the thick-film metal layer due to the lapse of time can be prevented by using an Au in the thick-film metal layer.