本发明揭示一种形成一光转换组件之方法,其包含提供一半导体构造,该半导体构造具有与一第二光致发光组件一起以磊晶方式生长之一第一光致发光组件。自该半导体构造之一第一侧在该第一光致发光组件中蚀刻一第一区且自该半导体构造之一第二侧在该第二光致发光组件中蚀刻一第二区。在某些实施例中,将该波长转换器附接至一电致发光组件,例如一发光二极管(LED)。在某些构造中,用该波长转换器之一窗口层之一第一部分大致覆盖该电致发光组件之一第一区,同时用该波长转换器之该第一光致发光组件之至少一部分大致覆盖该电致发光设备之一第二区而不覆盖该第一区。

A method of forming a light conversion element includes providing a semiconductor construction having a first photoluminescent element epitaxially grown together with a second photoluminescent element. A first region is etched in the first photoluminescent element from a first side of the semiconductor construction and a second region is etched in the second photoluminescent element from a second side of the semiconductor construction. In some embodiments the wavelength converter is attached to an electroluminescent element, such as a light emitting diode (LED). In some constructions a first region of the electroluminescent element is substantially covered with a first portion of a window layer of the wavelength converter while a second region of the electroluminescent device, but not the first region, is substantially covered with at least a portion of the first photoluminescent element of the wavelength converter.