本发明系有关一种图型状导电性膜之形成方法，其特征为，经历50至120℃之温度下使由粗铂微结晶粒子形成之层以图型状形成之基板，接触胺化合物及氢化铝之错合物之步骤。本发明可提供，无需厚重大型设备下简易形成，可确保与基板之间之电气性接合，适用于多数电子设备之图型状导电性层之方法。

Disclosed is a method for forming a patterned conductive film, which is characterized by comprising a step wherein a substrate that is provided with a patterned layer composed of platinum microcrystal particles is brought into contact with a complex of an amine compound and aluminum hydride at a temperature of 50-120 DEG C. By this method, a patterned conductive film which can secure an electrical connection with a substrate and is suitable for use in various electronic devices can be formed by a simple procedure without requiring large and heavy equipment.