本发明提供用于半导体组件的基底支撑架，在第一基底上形成主动支柱与伪支柱，使得伪支柱的高度大于主动支柱的高度，当第一基底接合至第二基底时，使用伪支柱作为支撑架可产生较佳的均匀性。在一实施例中，借由图案化遮罩的形成，可同时形成伪支柱与主动支柱，图案化遮罩中用于伪支柱的开口之宽度小于主动支柱。当使用类似电镀的制程形成伪支柱与主动支柱时，因为图案化遮罩中伪支柱开口的宽度较小，使得伪支柱的高度大于主动支柱。

Substrate stand-offs for use with semiconductor devices are provided. Active pillars and dummy pillars are formed on a first substrate such that the dummy pillars may have a height greater than a height of the active pillars. The dummy pillars act as stand-offs when joining the first substrate to a second substrate, thereby creating greater uniformity. In an embodiment, the dummy pillars may be formed simultaneously as the active pillars by forming a patterned mask having openings with a smaller width for the dummy pillars than for the active pillars. When an electro-plating process of the like is used to form the dummy and active pillars, the smaller width of the dummy pillar openings in the patterned mask causes the dummy pillars to have a greater height than the active pillars.