一种直通硅穿孔制造方法包括以下步骤:在硅板中蚀刻复数个直通孔。将氧化物衬沉积在硅板之表面上并且沉积在直通孔之侧壁及底壁上。然后,在直通孔中沉积金属导体。在可与氧化物衬同时使用之另一方案中,将氮化硅钝化层沉积在基板之硅板之曝露后表面上。

A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.