为了提供具有厚膜厚的金属凸块且可靠性高的氮化物半导体发光组件、以及该氮化物半导体发光组件的生产性得以提升之制造方法,该氮化物半导体发光组件的制造方法系具有以下构成之覆晶式氮化物半导体发光组件的制造方法:氮化物半导体发光组件构造,具有:积层于基板上的n型氮化物半导体层及p型氮化物半导体层、在基板的同一平面侧将n侧电极连接于n型氮化物半导体层的n侧电极连接面、和将p侧电极连接于p型氮化物半导体层的p侧电极连接面;n侧电极,系连接于n侧电极连接面;p侧电极,系连接于p侧电极连接面;及金属凸块,系形成于n侧电极上及p侧电极上;该氮化物半导体发光组件的制造方法系依序进行:保护层形成步骤、第1阻剂图案形成步骤、保护层蚀刻步骤、第1金属层形成步骤、第2阻剂图案形成步骤、第2金属层形成步骤和阻剂图案去除步骤。

To provide a reliable nitride semiconductor light emitting element having a thick metal bump and a method of manufacturing the nitride semiconductor light emitting element with an improved productivity, the manufacturing method of a flip-chip nitride semiconductor light emitting element including: a nitride semiconductor light emitting element structure having an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, which are laminated on a substrate, and an n-side electrode connecting surface for connecting an n-side electrode to the n-type nitride semiconductor layer and a p-side electrode connecting surface for connecting a p-side electrode to the p-type nitride semiconductor layer on the same plane side of the substrate, the n-side electrode being connected to the n-side electrode connecting surface and the p-side electrode being connected to the p-side electrode connecting surface; and metal bumps formed on the n-side electrode and the p-side electrode, wherein a protective layer forming step, a first resist pattern forming step, a protective layer etching step, a first metal layer forming step, a second resist pattern forming step, a second metal layer forming step and a resist pattern removing step are sequentially performed.