一种用于半导体组件之超接面结构包含：一硅基板，该硅基板上具有一第一导电型磊晶层；复数之高浓度第二导电型柱，形成于该第一导电型磊晶层内；及复数之低浓度第二导电型侧壁，形成于该第一导电型磊晶层内且位于该第二导电型柱之外侧面上。该半导体组件为超接面MOSFET、超接面MESFET、超接面Schottky晶体管、超接面IGBT、晶闸管(thyristor)、或超接面二极管。

A super junction for semiconductor device includes a silicon substrate with a first conductive type epitaxial layer, a plurality of highly-doped second conductive type columns formed in the first conductive type epitaxial layer, and a plurality of lightly-doped second conductive type side walls formed on outer surfaces of the highly-doped second conductive type. The semiconductor device is super-junction MOSFET, super junction MOSFET, super junction Schottky transistor, super junction IGBT, thyristor or super junction diode.