本发明揭示一种半导体设备，其包含：一基板；至少一个闸极电极；至少两个氧化硅层，其包括一第一氧化硅层及一第二氧化硅层，其中该第一氧化硅层比该第二氧化硅层更接近于该基板，且其中该第一氧化硅层之一厚度大于或等于该第二氧化硅层之一厚度；及一半导体层，其安置于该第一氧化硅层之至少一部分与该第二氧化硅层之至少一部分之间。此外，本发明揭示包含该半导体设备之一种影像十取设备及一种辐射成像设备。

A semiconductor device including a substrate, at least one gate electrode, at least two silicon oxide layers comprising a first silicon oxide layer and a second silicon oxide layer, wherein the first silicon oxide layer is nearer to the substrate than the second silicon oxide layer, and wherein a thickness of the first silicon oxide layer is greater than or equal to a thickness of the second silicon oxide layer, and a semiconductor layer disposed between at least a portion of the first silicon oxide layer and at least a portion of the second silicon oxide layer. Also, an image pick-up device and a radiation imaging device including the semiconductor device.