本发明系一种半导体设备之制造方法及半导体设备，其中，如根据实施形态之半导体设备之制造方法，形成第1导电层及第1绝缘层则从表面露出之第1配线层，形成第2导电层及第2绝缘层则从表面露出之第2配线层，经由前述第1绝缘层表面之中，将包含前述第1导电层周围之一部分范围，作为较前述第1导电层表面为低之时，于前述第1绝缘层表面，形成第1非接合面，接合前述第1导电层表面与前述第2导电层表面之同时，接合除了前述第1非接合面之前述第1绝缘层表面与前述第2绝缘层表面。

Certain embodiments provide a method for manufacturing a semiconductor device including forming a first interconnection layer having a first conductive layer and a first insulating layer which are exposed from a surface of the first interconnection layer, forming a second interconnection layer having a second conductive layer and a second insulating layer which are exposed from a surface of the second interconnection layer, forming a first non-bonded surface on the surface of the first insulating layer by making a partial area of the surface of the first insulating layer lower than the surface of the first conductive layer, the partial area containing surroundings of the first conductive layer, and connecting the surface of the first conductive layer and the surface of the second conductive layer and bonding the surface of the first insulating layer excluding the first non-bonded surface and the surface of the second insulating layer.