本发明提供一种制造包括电容器结构的半导体设备的方法，包括步骤：在半导体基板上方形成包括第一介电层以及充当该电容器结构的下电极的第一导电层的第一金属化层，在该第一金属化层上形成充当该电容器结构的电容器绝缘体的阻挡层，在该阻挡层上形成金属层，以及蚀刻该金属层以形成该电容器结构的上电极。

A method of manufacturing a semiconductor device comprising a capacitor structure is provided, including the steps of forming a first metallization layer comprising a first dielectric layer and a first conductive layer functioning as a lower electrode for the capacitor structure over a semiconductor substrate, forming a barrier layer functioning as a capacitor insulator for the capacitor structure on the first metallization layer, forming a metal layer on the barrier layer and etching the metal layer to form an upper electrode of the capacitor structure.