一种在半导体的基板(1)上形成外来氧化物或外来氮化物层(6)的方法，包含：提供具有氧化或氮化的表面层(3)的半导体基板(1)，将外来元素(5)供应至该氧化或氮化的表面层上；和将该氧化或氮化的表面层(3)保持在升高的温度下以分别利用原本存在于该氧化或氮化的表面层(3)中的该氧或氮来将该外来元素至少部分地氧化或氮化。

A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).