本发明提供用于蚀刻在等离子处理腔室中之基板的方法，该等离子处理腔室具有至少第一等离子产生区域和由半障壁结构与该第一等离子产生区域分开之第二等离子产生区域。本方法包含从在第一等离子产生区域中之主要进料气体产生第一等离子。本方法更包含从在第二等离子产生区域中之次要进料气体产生第二等离子，以使来自该第二等离子之至少一些物种迁移进入该第一等离子产生区域中。本方法可附加地包含在该第一等离子已使用来自该第二等离子之迁移物种增大后，使用该第一等离子蚀刻该基板。

Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.