揭示使用氧化物及/或有机半导体材料之形成互补式穿隧场效应管(TFET)的设备。一种型式的TFET包括：基底；掺杂的第一区，形成在基底上方，具有选自周期表的III-V、IV-IV、及IV族组成的群组之p型材料；掺杂的第二区，形成在基底上方，具有透明氧化物n型半导体材料；及，闸极堆栈，耦合至掺杂的第一及第二区。另一型式的TFET包括：基底；掺杂的第一区，形成在基底上方，具有p型有机半导体材料；掺杂的第二区，形成在基底上方，具有n型氧化物半导体材料；及，闸极堆栈，耦合至掺杂的源极和汲极区。在另一实例中，以有机唯半导体材料用于主动区而制造TFET。

Described is an apparatus forming complementary tunneling field effect transistors (TFETs) using oxide and/or organic semiconductor material. One type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type material selected from a group consisting of Group III-V, IV-IV, and IV of a periodic table; a doped second region, formed above the substrate, having transparent oxide n-type semiconductor material; and a gate stack coupled to the doped first and second regions. Another type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type organic semiconductor material; a doped second region, formed above the substrate, having n-type oxide semiconductor material; and a gate stack coupled to the doped source and drain regions. In another example, TFET is made using organic only semiconductor materials for active regions.