一种具有穿隧接合层的磊晶结构、p型半导体结构朝上的制程中间结构以及其制造方法。磊晶结构由下至上依序包含：基板、第一n型半导体层、穿隧接合层、p型半导体层、多量子井层、以及第二n型半导体层，其中第一n型半导体层、p型半导体层、以及穿隧接合层形成p型半导体结构。p型半导体结构朝上的制程中间结构的制造方法包含：在前述磊晶结构的第二n型半导体层上设置永久性基板，以形成叠层结构；将叠层结构上下翻转，并移除前述磊晶结构的基板使p型半导体结构朝上。经由该制造方法制作的p型半导体结构朝上的制程中间结构由下至上依序包含：永久性基板、第二n型半导体层、多量子井层、p型半导体结构。其中p型半导体结构包含p型半导体层、穿隧接合层以及第一n型半导体层。

An epitaxial structure with a tunnel junction, a p-side up processing intermediate structure and a manufacturing method thereof are provided. The epitaxial structure sequentially from bottom to top includes: a substrate, a first N-type semi-conductive layer, a tunnel junction layer, a P-type semi-conductive layer, a multiple quantum well layer and a second N-type semi-conductive layer, wherein the first N-type semi-conductive layer, P-type semi-conductive layer and the tunnel junction layer together form a P-type semi-conductive structure. The manufacturing method of the p-side up processing intermediate structure includes disposing a permanent substrate on the said second N-type semi-conductive layer to forma laminated structure; then making the laminated structure upside down and removing the substrate of the epitaxial structure thereby making the P-type semi-conductive structure up. The processing structure producing by the manufacturing method from bottom to top sequentially includes: the permanent substrate, the second N-type semi-conductive layer, the multiple quantum well layer, the P-type semi-conductive structure, wherein the P-type semi-conductive structure comprises the P-type semi-conductive layer, the tunnel junction layer and the first N-type semi-conductive layer.