提供在搭载半导体设备于热膨胀率不同的外部配线基板时，可防止因热的变化在陶瓷基板所发生的破裂以及内层配线的断线之半导体设备。 一种半导体设备，其特征包含： 陶瓷基板，具有第一以及第二主面； 配线图案，形成于该第一主面，搭载半导体零件； 外部电极，形成于该第二主面，与外部电路连接； 内层配线，形成于该陶瓷基板的内部，经由贯穿孔配线连接该配线图案与该外部电极； 半导体零件，与该配线图案连接；以及 树脂层，被覆该第一主面以及该半导体零件，其中 该内层配线离该陶瓷基板侧面0.05mm以上，形成于内侧。

The purpose of the present invention is to provide a semiconductor device capable of preventing cracks of a ceramic substrate and the open-circuit of internal-layer wiring due to thermal variations generated when the semiconductor device is mounted on external wiring boards with different thermal expansion coefficients. A semiconductor device is featured with the followings: a ceramic substrate, which has the first and the second principal planes; a wiring pattern, which is formed on the first principal plane and is mounted with semiconductor components; the external electrode, which is formed on the second principal plane and is connected to the external circuit; internal-layer wiring, which is formed inside the ceramic substrate to electrically connect the wiring pattern and the external electrode via the through-hole wiring; semiconductor components, which are connected to the wiring pattern; and the resin layer, which covers the first principal plane and the semiconductor component. In addition, the internal layer wiring is formed internally with respect to the side of the ceramic substrate with a clearance of at least 0.05 mm.