Invention Grant
- Patent Title: Method of forming structures with V shaped bottom on silicon substrate
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Application No.: US15417556Application Date: 2017-01-27
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Publication No.: US10002759B2Publication Date: 2018-06-19
- Inventor: Xinyu Bao , Chun Yan , Errol Antonio C. Sanchez
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/311

Abstract:
The present disclosure generally relate to methods of processing a substrate in an epitaxy chamber. The method includes applying a passivating agent containing antimony to portions of a silicon substrate exposed through trenches formed in a dielectric layer on the silicon substrate, while applying the passivating agent containing antimony, exposing the silicon substrate to a group IV-containing precursor to form an epitaxial layer having a V-shaped structure having an exposed (111) plane at a bottom of the trenches, and forming a semiconductor layer on the epitaxial layer.
Public/Granted literature
- US20180033621A1 METHOD OF FORMING STRUCTURES WITH V SHAPED BOTTOM ON SILICON SUBSTRATE Public/Granted day:2018-02-01
Information query
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