发明授权
- 专利标题： Fabrication of substrates with a useful layer of monocrystalline semiconductor material
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申请号： US13291468申请日： 2011-11-08
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公开(公告)号： US10002763B2公开(公告)日： 2018-06-19
- 发明人: Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
- 申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
- 申请人地址： FR Bernin
- 专利权人： Soitec
- 当前专利权人： Soitec
- 当前专利权人地址： FR Bernin
- 代理机构： TraksBritt
- 优先权： FR0015279 20001127; FR0207132 20020611; FR0300780 20030124
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/18 ; H01L21/762
摘要：
The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing a support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the semiconductor substrate.