发明授权
- 专利标题： Method and apparatus for protecting metal interconnect from halogen based precursors
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申请号： US14711135申请日： 2015-05-13
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公开(公告)号： US10002834B2公开(公告)日： 2018-06-19
- 发明人: Mehul B. Naik , Paul F. Ma , Tae Hong Ha , Srinivas Guggilla
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson + Sheridan, LLP
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L21/285
摘要：
A method and apparatus for forming an interconnect on a substrate is provided. A protective layer is formed on the substrate and in a via formed on the substrate wherein the protective layer is resistant to a halogen containing material. A barrier layer is formed on top of the protective layer. The barrier layer comprises a halogen containing material. A metal layer is deposited over the barrier layer. In another embodiment, the protective layer is selectively deposited in the via.
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