- 专利标题: Solid-state imaging element, method of manufacturing the same, and imaging device for reducing thickness of photoelectric conversion film
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申请号: US15426772申请日: 2017-02-07
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公开(公告)号: US10002902B2公开(公告)日: 2018-06-19
- 发明人: Kenichi Nishizawa
- 申请人: SONY CORPORATION
- 申请人地址: JP Kanagawa
- 专利权人: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 当前专利权人: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 当前专利权人地址: JP Kanagawa
- 代理机构: Chip Law Group
- 优先权: JP2013-134838 20130627
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H01L31/0392
摘要:
In pixels that are two-dimensionally arranged in a matrix fashion in the pixel array unit of a solid-state imaging element, a photoelectric conversion film having a light shielding film buried therein is formed and stacked on the light incident side of the photodiode. The present technique can be applied to a CMOS image sensor compatible with the global shutter system, for example.
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