Solid-state imaging element, method of manufacturing the same, and imaging device for reducing thickness of photoelectric conversion film
摘要:
In pixels that are two-dimensionally arranged in a matrix fashion in the pixel array unit of a solid-state imaging element, a photoelectric conversion film having a light shielding film buried therein is formed and stacked on the light incident side of the photodiode. The present technique can be applied to a CMOS image sensor compatible with the global shutter system, for example.
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