- 专利标题: Parallel-connected semiconductor devices with current sharing technology and control method thereof
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申请号: US15054098申请日: 2016-02-25
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公开(公告)号: US10003189B2公开(公告)日: 2018-06-19
- 发明人: Qian Ouyang
- 申请人: Hangzhou MPS Semiconductor Technology Ltd.
- 申请人地址: CN Hangzhou
- 专利权人: Hangzhou MPS Semiconductor Technology Ltd.
- 当前专利权人: Hangzhou MPS Semiconductor Technology Ltd.
- 当前专利权人地址: CN Hangzhou
- 代理机构: Perkins Coie LLP
- 主分类号: H02M3/158
- IPC分类号: H02M3/158 ; H02H9/00 ; G05F1/59 ; H02M1/36
摘要:
A semiconductor device for limiting inrush current in hot-swap applications includes a power transistor and a current sensing circuit. The power transistor has a first terminal, a second terminal and a control terminal, wherein the first terminal is configured to receive an input voltage from a power supply, the second terminal is configured to provide an output voltage to a load, the control terminal is configured to receive a control voltage. Under regulation of the control voltage, the output voltage increases gradually towards the input voltage during a startup period and becomes substantially equal to the input voltage in a steady state. The current sensing circuit senses the current flowing through the power transistor and generates a current sensing signal. In order to achieve current balance, the control voltage is adjusted based on the relationship between the current sensing signal and current sensing signals of other semiconductor devices connected in parallel with the semiconductor device.
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