- 专利标题： Method of manufacturing a semiconductor device and a semiconductor device
-
申请号： US15602807申请日： 2017-05-23
-
公开(公告)号： US10008497B2公开(公告)日： 2018-06-26
- 发明人: Tung Ying Lee , Ziwei Fang , Yee-Chia Yeo , Meng-Hsuan Hsiao
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L27/088 ; H01L29/66 ; H01L29/08 ; H01L21/768 ; H01L21/02 ; H01L29/06 ; H01L21/8234 ; H01L29/78 ; H01L29/165 ; H01L29/167 ; H01L29/51 ; H01L29/49
摘要：
In a method of forming a FinFET, a first sacrificial layer is formed over a source/drain structure of a FinFET structure and an isolation insulating layer. The first sacrificial layer is recessed so that a remaining layer of the first sacrificial layer is formed on the isolation insulating layer and an upper portion of the source/drain structure is exposed. A second sacrificial layer is formed on the remaining layer and the exposed source/drain structure. The second sacrificial layer and the remaining layer are patterned, thereby forming an opening. A dielectric layer is formed in the opening. After the dielectric layer is formed, the patterned first and second sacrificial layers are removed to form a contact opening over the source/drain structure. A conductive layer is formed in the contact opening.
公开/授权文献
信息查询
IPC分类:
