- 专利标题： Metal FinFET anti-fuse
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申请号： US15099199申请日： 2016-04-14
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公开(公告)号： US10008507B2公开(公告)日： 2018-06-26
- 发明人: Praneet Adusumilli , Alexander Reznicek , Oscar van der Straten , Miaomiao Wang , Chih-Chao Yang
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Daniel P. Morris, Esq.
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L27/112 ; H01L29/66
摘要：
Semiconductor structures containing FinFET anti-fuses with reduced breakdown voltage are provided which can be readily integrated with high performance FinFETs. The anti-fuse includes at least one metal structure having a faceted sidewall. The sharp corner of the faceted sidewall of the at least one metal structure causes an electric field concentration, thus reducing the breakdown voltage of the anti-fuse.
公开/授权文献
- US20170301680A1 METAL FINFET ANTI-FUSE 公开/授权日：2017-10-19
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