- 专利标题： Image sensors with organic photodiodes and methods for forming the same
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申请号： US15242220申请日： 2016-08-19
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公开(公告)号： US10008546B2公开(公告)日： 2018-06-26
- 发明人: Chin-Wei Liang , Chia-Shiung Tsai , Cheng-Yuan Tsai , Hsing-Lien Lin
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L27/30 ; H01L27/146 ; H01L51/10
摘要：
Embodiments of forming an image sensor with organic photodiodes are provided. Trenches are formed in the organic photodiodes to increase the PN-junction interfacial area, which improves the quantum efficiency (QE) of the photodiodes. The organic P-type material is applied in liquid form to fill the trenches. A mixture of P-type materials with different work function values and thickness can be used to meet the desired work function value for the photodiodes.
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