Invention Grant
- Patent Title: Chemically sensitive field effect transistors and uses thereof in electronic nose devices
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Application No.: US12669965Application Date: 2008-07-24
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Publication No.: US10011481B2Publication Date: 2018-07-03
- Inventor: Hossam Haick
- Applicant: Hossam Haick
- Applicant Address: IL Haifa
- Assignee: Technion Research and Development Foundation Ltd.
- Current Assignee: Technion Research and Development Foundation Ltd.
- Current Assignee Address: IL Haifa
- Agency: Roach Brown McCarthy & Gruber, P.C
- Agent Kevin D. McCarthy
- International Application: PCT/IL2008/001028 WO 20080724
- International Announcement: WO2009/013754 WO 20090129
- Main IPC: B82Y15/00
- IPC: B82Y15/00 ; B82Y30/00 ; G01N33/543 ; G01N27/414 ; H01L29/08 ; G01N33/00 ; G01N33/497
Abstract:
The present invention provides an electronic nose device based on chemically sensitive field effect transistors. In particular, the sensors of the electronic nose device are composed of non-oxidized, functionalized silicon nanowires which can detect volatile organic compounds with very high sensitivity. Methods of use in diagnosing diseases including various types of cancer are disclosed.
Public/Granted literature
- US20100198521A1 CHEMICALLY SENSITIVE FIELD EFFECT TRANSISTORS AND USES THEREOF IN ELECTRONIC NOSE DEVICES Public/Granted day:2010-08-05
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