发明授权
- 专利标题： Semiconductor device with self-protecting fuse and method of fabricating the same
-
申请号： US15062063申请日： 2016-03-05
-
公开(公告)号： US10014251B2公开(公告)日： 2018-07-03
- 发明人: Chen-Chung Lai , Kang-Min Kuo , Yen-Ming Peng , Gwo-Chyuan Kuoh , Han-Wei Yang , Yi-Ruei Lin , Chin-Chia Chang , Ying-Chieh Liao , Che-Chia Hsu , Bor-Zen Tien
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Maschoff Brennan
- 主分类号： H01L23/525
- IPC分类号： H01L23/525 ; H01L21/306 ; H01L21/02 ; H01L21/3213 ; H01L21/762 ; H01L29/06 ; H01L29/167 ; H01L21/56 ; H01L23/31 ; H01L29/66 ; H01L29/78
摘要：
A semiconductor device with the metal fuse is provided. The metal fuse connects an electronic component (e.g., a transistor) and a existing dummy feature which is grounded. The protection of the metal fuse can be designed to start at the beginning of the metallization formation processes. The grounded dummy feature provides a path for the plasma charging to the ground during the entire back end of the line process. The metal fuse is a process level protection as opposed to the diode, which is a circuit level protection. As a process level protection, the metal fuse protects subsequently-formed circuitry. In addition, no additional active area is required for the metal fuse in the chip other than internal dummy patterns that are already implemented.
公开/授权文献
信息查询
IPC分类:
