Invention Grant
- Patent Title: SiC crystalline on Si substrates to allow integration of GaN and Si electronics
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Application No.: US13760496Application Date: 2013-02-06
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Publication No.: US10014291B2Publication Date: 2018-07-03
- Inventor: Kong-Beng Thei , Jiun-Lei Jerry Yu , Chun Lin Tsai , Hsiao-Chin Tuan , Alex Kalnitsky
- Applicant: Kong-Beng Thei , Jiun-Lei Jerry Yu , Chun Lin Tsai , Hsiao-Chin Tuan , Alex Kalnitsky
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L27/06 ; H01L21/8258 ; H01L27/085 ; H01L21/265
Abstract:
A silicon substrate with a GaN-based device and a Si-based device on the silicon substrate is provided. The silicon substrate includes the GaN-based device on a SiC crystalline region. The SiC crystalline region is formed in the silicon substrate. The silicon substrate also includes the Si-based device on a silicon region, and the silicon region is next to the SiC crystalline region on the silicon substrate.
Public/Granted literature
- US20130146893A1 SIC CRYSTALLINE ON SI SUBSTRATES TO ALLOW INTEGRATION OF GAN AND SI ELECTRONICS Public/Granted day:2013-06-13
Information query
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