Provided is a laterally diffused metal-oxide-semiconductor field-effect transistor, comprising a substrate (110), a source (150), a drain (140), a body region (160), a P-type field-limiting ring (135), and a well region on the substrate (110); the well region comprises an inserted well (122), which has P-type doping and is disposed below the drain and connected to the drain; N wells (124) disposed at the two sides of the inserted well (122); a P well (126) disposed next to the N well (124) and connected to the N well (124); a P-type field-limiting ring (135), which is disposed inside the N well (124), is a closed ring-shaped structure, and is located at the periphery below the drain (140); the inserted well (122) extends in its longitudinal direction to the position where it is in contact with said P-type field-limiting ring (135); the source (150) and the body region (160) are disposed inside the P well (126).