- 专利标题: Manufacturing apparatus of high purity MOx nanostructure and method of manufacturing the same
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申请号: US14767578申请日: 2013-02-13
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公开(公告)号: US10014523B2公开(公告)日: 2018-07-03
- 发明人: Bo-Yun Jang , Joon-Soo Kim , Jin-Seok Lee
- 申请人: KOREA INSTITUTE OF ENERGY RESEARCH
- 申请人地址: KR Daejeon
- 专利权人: KOREA INSTITUTE OF ENERGY RESEARCH
- 当前专利权人: KOREA INSTITUTE OF ENERGY RESEARCH
- 当前专利权人地址: KR Daejeon
- 代理机构: Hauptman Ham, LLP
- 优先权: KR10-2013-0015197 20130213
- 国际申请: PCT/KR2013/001110 WO 20130213
- 国际公布: WO2014/126273 WO 20140821
- 主分类号: H01M4/48
- IPC分类号: H01M4/48 ; C23C16/22 ; C23C16/455 ; H01M4/04 ; B82Y40/00 ; H01M4/02
摘要:
There is disclosed that a MOx nanostructure manufacturing apparatus and a manufacturing method thereof can not only supply a reaction gas more effectively to the surface of a molten metal with ease by injecting a carrier gas to the surface of the molten metal above a graphite crucible as well as bringing the reaction gas in the lower side of the graphite crucible, but also maximize volatilization rates through an inflow of the reaction gas from the lower portion toward the upper of the graphite crucible.
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