- 专利标题: Frequency enhanced active transistor
-
申请号: US15213718申请日: 2016-07-19
-
公开(公告)号: US10014835B1公开(公告)日: 2018-07-03
- 发明人: Russell D. Wyse , Michael L. Hageman
- 申请人: Rockwell Collins, Inc.
- 申请人地址: US IA Cedar Rapids
- 专利权人: Rockwell Collins, Inc.
- 当前专利权人: Rockwell Collins, Inc.
- 当前专利权人地址: US IA Cedar Rapids
- 代理商 Angel N. Gerdzhikov; Donna P. Suchy; Daniel M. Barbieri
- 主分类号: H03F3/45
- IPC分类号: H03F3/45 ; H03G1/00 ; H03F3/19
摘要:
A transistor cell can be modeled as a transistor with a collector, a base, and an emitter operating with a current at the collector to produce a minimum transconductance in the transistor cell that increases a current gain and improves at least one operating characteristic of the transistor cell. The operating characteristics include bandwidth, gain, and output power.
信息查询