Invention Grant
- Patent Title: Transistor temperature sensing
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Application No.: US14856004Application Date: 2015-09-16
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Publication No.: US10018515B2Publication Date: 2018-07-10
- Inventor: Yanxiang Liu , Haining Yang , Kern Rim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated-Toler
- Main IPC: G01K7/01
- IPC: G01K7/01 ; H01L27/092 ; H01L29/786
Abstract:
A device includes a source contact, a drain contact, a gate contact, and a body contact. The body contact is electrically coupled to a temperature sensing circuit. The source contact, the drain contact, the gate contact, and the body contact are included in a fin field-effect transistor (finFET).
Public/Granted literature
- US20170074728A1 TRANSISTOR TEMPERATURE SENSING Public/Granted day:2017-03-16
Information query
