发明授权
- 专利标题: Power semiconductor module and method for producing a power semiconductor module
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申请号: US14925274申请日: 2015-10-28
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公开(公告)号: US10020237B2公开(公告)日: 2018-07-10
- 发明人: Alexander Hoehn , Georg Borghoff
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Murphy, Bilak & Homiller, PLLC
- 优先权: DE102014115847 20141030
- 主分类号: H01L23/02
- IPC分类号: H01L23/02 ; H01L23/15 ; H01L23/053 ; H01L21/48 ; H01L23/498 ; H05K5/00
摘要:
A power semiconductor module includes a module housing and a circuit carrier having a dielectric insulation carrier and an upper metallization layer applied onto an upper side of the dielectric insulation carrier. A semiconductor component is arranged on the circuit carrier. The power semiconductor module also has an electrically conductive terminal block connected firmly and electrically conductively to the circuit carrier and/or to the semiconductor component. The terminal block has a screw thread that is accessible from an outer side of the module housing. A method for producing such a power semiconductor module is also provided.
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