Invention Grant
- Patent Title: Semiconductor structure and fabricating method thereof
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Application No.: US15158402Application Date: 2016-05-18
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Publication No.: US10020265B2Publication Date: 2018-07-10
- Inventor: Kuo-Hung Lee , Chih-Fei Lee , Fu-Cheng Chang , Ching-Hung Kao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/544 ; H01L21/78 ; H01L23/522 ; H01L23/528 ; H01L49/02

Abstract:
A method of fabricating a semiconductor structure includes forming an alignment mark layer on a substrate; patterning the alignment mark layer for forming at least one alignment mark feature; forming a bottom conductive layer on the patterned alignment mark layer in a substantially conformal manner; forming an insulator layer on the bottom conductive layer; and forming a top conductive layer on the insulator layer.
Public/Granted literature
- US20170179037A1 SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF Public/Granted day:2017-06-22
Information query
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