Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
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Application No.: US15263739Application Date: 2016-09-13
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Publication No.: US10020320B2Publication Date: 2018-07-10
- Inventor: Hiroshi Nakaki , Masaru Kito
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/11582 ; H01L23/373

Abstract:
According to the embodiment, a semiconductor device includes: a stacked body; a columnar portion, an insulating portion; and wall portion. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The columnar portion is provided in the stacked body and extends in a staking direction of the stacked body. The insulating portion is provided around the stacked body and surrounds the stacked body. The wall portion is provided in the insulating portion and is separated from the stacked body. The wall portion extends in the stacking direction and in a first direction crossing the stacking direction.
Public/Granted literature
- US20170243884A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2017-08-24
Information query
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