Invention Grant
- Patent Title: Circuit structure having islands between source and drain and circuit formed
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Application No.: US15201130Application Date: 2016-07-01
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Publication No.: US10020361B2Publication Date: 2018-07-10
- Inventor: Chen-Ju Yu , Chih-Wen Hsiung , Fu-Wei Yao , Chun-Wei Hsu , Jiun-Lei Jerry Yu , Fu-Chih Yang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/06 ; H01L29/778 ; H01L29/20 ; H01L29/66 ; H01L21/02 ; H01L21/3065 ; H01L29/205 ; H01L21/306
Abstract:
A method of making a circuit structure includes growing a bulk layer over a substrate, and growing a donor-supply layer over the bulk layer. The method further includes depositing a doped layer over the donor-supply layer, and patterning the doped layer to form a plurality of islands. The method further includes forming a gate structure over the donor-supply layer, wherein the gate structure is partially over a largest island of the plurality of islands. The method further includes forming a drain over the donor-supply layer, wherein at least one island of the plurality of islands is between the gate structure and the drain.
Public/Granted literature
- US20160315145A1 CIRCUIT STRUCTURE HAVING ISLANDS BETWEEN SOURCE AND DRAIN AND CIRCUIT FORMED Public/Granted day:2016-10-27
Information query
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