- 专利标题： Bottle-neck recess in a semiconductor device
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申请号： US14732493申请日： 2015-06-05
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公开(公告)号： US10020397B2公开(公告)日： 2018-07-10
- 发明人: Eric Peng , Chao-Cheng Chen , Chii-Horng Li , Ming-Hua Yu , Shih-Hao Lo , Syun-Ming Jang , Tze-Liang Lee , Ying Hao Hsieh
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/306 ; H01L21/3065 ; H01L29/165 ; H01L29/66
摘要：
A device including a gate stack over a semiconductor substrate having a pair of spacers abutting sidewalls of the gate stack. A recess is formed in the semiconductor substrate adjacent the gate stack. The recess has a first profile having substantially vertical sidewalls and a second profile contiguous with and below the first profile. The first and second profiles provide a bottle-neck shaped profile of the recess in the semiconductor substrate, the second profile having a greater width within the semiconductor substrate than the first profile. The recess is filled with a semiconductor material. A pair of spacers are disposed overly the semiconductor substrate adjacent the recess.
公开/授权文献
- US20150270397A1 BOTTLE-NECK RECESS IN A SEMICONDUCTOR DEVICE 公开/授权日：2015-09-24
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