Invention Grant
- Patent Title: Method of producing laminated thin film structure, laminated thin film structure, and piezoelectric element including same
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Application No.: US15846272Application Date: 2017-12-19
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Publication No.: US10020443B2Publication Date: 2018-07-10
- Inventor: Takayuki Naono , Takahiro Sano
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2015-133333 20150702
- Main IPC: H01L41/187
- IPC: H01L41/187 ; H01L41/312 ; H01L41/09 ; H01L41/316 ; H01L41/08 ; H01L41/047

Abstract:
A first lamination step of forming lower electrode films on both surfaces of a diaphragm and directly forming a first Pb-containing perovskite oxide film which has a larger thermal expansion coefficient than that of the diaphragm and has a columnar structure on a front surface of the lower electrode film; and a second lamination step of directly forming a second Pb-containing perovskite oxide film on a front surface of the lower electrode film are sequentially performed. The second Pb-containing perovskite oxide film is formed under a condition that a difference between a molar ratio RA1 of Pb to a B-site element in the first Pb-containing perovskite oxide film and a molar ratio RB1 of Pb to a B-site element in the second Pb-containing perovskite oxide film after the second lamination step is 0.056 or less.
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