Invention Grant
- Patent Title: Semiconductor device structure and method for forming the same
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Application No.: US15007532Application Date: 2016-01-27
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Publication No.: US10032713B2Publication Date: 2018-07-24
- Inventor: Yung-Chih Wang , Carlos H. Diaz , Tien-Lu Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768 ; H01L23/528 ; H01L23/532 ; H01L27/22

Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first conductive plug and a second conductive plug over the semiconductor substrate and adjacent to each other. The semiconductor device structure includes a first conductive via structure and a second conductive via structure over the semiconductor substrate and adjacent to each other. A first distance between the first conductive plug and the second conductive plug is less than a second distance between the first conductive via structure and the second conductive via structure. A first height of the first conductive plug is greater than a second height of the first conductive via structure.
Public/Granted literature
- US20170213790A1 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2017-07-27
Information query
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