A method of forming a semiconductor on a porous semiconductor structure. The method may include forming a stack, the stack includes (from bottom to top) a substrate, a base silicon layer, a thick silicon layer, and a thin silicon layer, where the thin silicon layer and the thick silicon layer are relaxed; converting the thick silicon layer into a porous silicon layer using a porousification process; and forming a III-V layer on the thin silicon layer, where the III-V layer is relaxed, the thin silicon layer is strained, and the porous silicon layer is partially strained.