Invention Grant
- Patent Title: Image sensor
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Application No.: US14983445Application Date: 2015-12-29
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Publication No.: US10038033B2Publication Date: 2018-07-31
- Inventor: Pei-Wen Yen , Yan-Rung Lin , Kai-Ping Chuang
- Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Applicant Address: TW Hsinchu
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW Hsinchu
- Agency: Rabin & Berdo, P.C.
- Main IPC: H01L27/30
- IPC: H01L27/30 ; H01L51/00 ; H01L51/44

Abstract:
An image sensor is provided. The image sensor includes a pixel sensing circuit corresponding to at least a first pixel region and a second pixel region adjacent to each other, a pixel electrode disposed on the pixel sensing circuit, and a opto electrical conversion layer including a photo sensing layer and a carrier transport layer disposed on the pixel sensing circuit and the pixel electrode. The pixel electrode is electrically connected to the pixel sensing circuit and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes and the second electrodes are coplanar and have different polarities. The first electrode or the second electrode located in the first pixel region is adjacent to the first electrode or the second electrode having the same polarity located in the second pixel region.
Public/Granted literature
- US20170186818A1 IMAGE SENSOR Public/Granted day:2017-06-29
Information query
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