- 专利标题: Non-volatile memory device including nano floating gate
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申请号: US15228943申请日: 2016-08-04
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公开(公告)号: US10038068B2公开(公告)日: 2018-07-31
- 发明人: Jun-Hyung Kim
- 申请人: SK INNOVATION CO., LTD.
- 申请人地址: KR Seoul
- 专利权人: SK INNOVATION CO., LTD.
- 当前专利权人: SK INNOVATION CO., LTD.
- 当前专利权人地址: KR Seoul
- 代理机构: IP & T Group LLP
- 优先权: KR10-2013-0159736 20131219
- 主分类号: H01L29/788
- IPC分类号: H01L29/788 ; H01L29/423 ; H01L21/28 ; H01L29/66 ; H01L29/49 ; H01L51/05 ; H01L27/11521 ; H01L29/51
摘要:
A non-volatile memory device includes a floating gate for charging and discharging of charges over a substrate. The floating gate comprises a linker layer formed over the substrate and including linkers to be bonded to metal ions and metallic nanoparticles formed out of the metal ions over the linker layer.