Invention Grant
- Patent Title: Three-dimensional finFET transistor with portion(s) of the fin channel removed in gate-last flow
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Application No.: US14847462Application Date: 2015-09-08
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Publication No.: US10038096B2Publication Date: 2018-07-31
- Inventor: Hui Zang , Min-hwa Chi
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Stephen P. Scuderi
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/76 ; H01L21/311 ; H01L29/78 ; H01L21/762 ; H01L29/06 ; H01L29/66
Abstract:
A three-dimensional transistor includes a channel with a center portion (forked channel) or side portions (narrow channel) removed, or fins without shaping, after removal of the dummy gate and before a replacement metal gate is formed.
Public/Granted literature
- US20170069759A1 THREE-DIMENSIONAL FINFET TRANSISTOR WITH PORTION(S) OF THE FIN CHANNEL REMOVED IN GATE-LAST FLOW Public/Granted day:2017-03-09
Information query
IPC分类:
