发明授权
- 专利标题： Plasma assisted atomic layer deposition metal oxide for patterning applications
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申请号： US15609864申请日： 2017-05-31
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公开(公告)号： US10043657B2公开(公告)日： 2018-08-07
- 发明人: Shankar Swaminathan , Frank L. Pasquale , Adrien LaVoie
- 申请人： Lam Research Corporation
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Weaver Austin Villeneuve & Sampson LLP
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L43/12 ; H01L43/02 ; H01L45/00 ; H01L43/08 ; H01J37/32 ; H01L21/314 ; H01L21/67 ; C23C16/04 ; C23C16/40 ; C23C16/455 ; H01L21/31 ; H01L27/22 ; H01L27/24
摘要：
The embodiments herein relate to methods and apparatus for depositing an encapsulation layer over memory stacks in MRAM and PCRAM applications. The encapsulation layer is a titanium dioxide (TiO2) layer deposited through an atomic layer deposition reaction. In some embodiments, the encapsulation layer may be deposited as a bilayer, with an electrically favorable layer formed atop a protective layer. In certain implementations, gaps between neighboring memory stacks may be filled with titanium oxide, for example through an atomic layer deposition reaction or a chemical vapor deposition reaction.