Invention Grant
- Patent Title: Semiconductor device having gate electrodes with stacked metal layers
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Application No.: US15372876Application Date: 2016-12-08
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Publication No.: US10043803B2Publication Date: 2018-08-07
- Inventor: Wonkeun Chung , Gigwan Park , Huyong Lee , TaekSoo Jeon , Sangjin Hyun
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2015-0188734 20151229
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/43 ; H01L29/49 ; H01L27/092 ; H01L29/423
Abstract:
A semiconductor device includes a substrate having an active pattern thereon, a gate electrode intersecting the active pattern, and a spacer on a sidewall of the gate electrode. The gate electrode includes a first metal pattern adjacent to the active pattern. The first metal pattern has a first portion parallel to the sidewall and a second portion parallel to the substrate. A top surface of the first portion has a descent in a direction from the spacer towards the second portion.
Public/Granted literature
- US20170186746A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2017-06-29
Information query
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