- 专利标题： Semiconductor device
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申请号： US15671503申请日： 2017-08-08
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公开(公告)号： US10050108B2公开(公告)日： 2018-08-14
- 发明人: Takashi Okawa
- 申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 申请人地址： JP Toyota
- 专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人地址： JP Toyota
- 代理机构： Oliff PLC
- 优先权： JP2016-189852 20160928
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L27/04 ; H01L29/06 ; H01L29/16 ; H01L29/423 ; H01L29/78 ; H01L29/20
摘要：
A semiconductor device may include a semiconductor layer, an insulation gate section, and a first conductivity-type semiconductor region; wherein the semiconductor layer may include a vertical drift region being of a second conductivity type and disposed at the one of main surfaces; a body region being of the first conductivity type, adjoining the vertical drift region, and disposed at the one of main surfaces; and a source region being of the second conductivity type, separated from the vertical drift region by the body region, and disposed at the one of main surfaces, wherein the insulation gate section is opposed to a portion of the body region which separates the vertical drift region and the source region; and the first conductivity-type semiconductor region is opposed to at least a part of a portion of the vertical drift region which is disposed at the one of main surfaces.
公开/授权文献
- US20180090571A1 SEMICONDUCTOR DEVICE 公开/授权日：2018-03-29
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