Invention Grant
- Patent Title: Power amplification module
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Application No.: US15364690Application Date: 2016-11-30
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Publication No.: US10050647B2Publication Date: 2018-08-14
- Inventor: Masatoshi Hase
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: JP2015-093192 20150430
- Main IPC: G06G7/12
- IPC: G06G7/12 ; H04B1/04 ; H03F3/19 ; H03F3/24 ; H03F1/02 ; H03F3/191

Abstract:
A power amplification module includes a first amplification transistor that receives a first signal outputs an amplified second signal from the collector thereof; and a bias circuit that supplies a bias current to the base of the first amplification transistor. The first bias circuit includes a first transistor that is diode connected and is supplied with a bias control current; a second transistor that is diode connected, the collector thereof being connected to the emitter of the first transistor; a third transistor, the base thereof being connected to the base of the first transistor, and the bias current being output from the emitter thereof; a fourth transistor, the collector thereof being connected to the emitter of the third transistor and the base thereof being connected to the base of the second transistor; and a first capacitor between the base and the emitter of the third transistor.
Public/Granted literature
- US20170085232A1 POWER AMPLIFICATION MODULE Public/Granted day:2017-03-23
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